Growth and Characterization of High In-content InGaN grown by MBE using Metal Modulated Epitaxy Technique (MME)

Zhiwei Xing; Wenxian Yang; Zhengbing Yuan; Xuefei Li; Yuanyuan Wu; Junhua Long; S. Jin; Yukun Zhao; Tong Liu; Lifeng Bian; Shulong Lu; Muchang Luo

doi:10.1016/j.jcrysgro.2019.03.021

Growth and Characterization of High In-content InGaN grown by MBE using Metal Modulated Epitaxy Technique (MME)

Zhiwei Xing(University of Science and Technology of China), Wenxian Yang(University of Science and Technology of China), Zhengbing Yuan(Chinese Academy of Sciences), Xuefei Li(Chinese Academy of Sciences), Yuanyuan Wu(Chinese Academy of Sciences), Junhua Long(University of Science and Technology of China), S. Jin(University of Science and Technology of China), Yukun Zhao(Chinese Academy of Sciences), Tong Liu(Chinese Academy of Sciences), Lifeng Bian(Chinese Academy of Sciences), Shulong Lu(Chinese Academy of Sciences), Muchang Luo

Journal of Crystal Growth

March 20, 2019

10.1016/j.jcrysgro.2019.03.021

Cited by 25

Abstract

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