25.1%-Efficient Monolithic Perovskite/Silicon Tandem Solar Cell Based on a <i>p</i>-type Monocrystalline Textured Silicon Wafer and High-Temperature Passivating Contacts

Gizem Nogay; Florent Sahli; Jérémie Werner; R. Monnard; Mathieu Boccard; Matthieu Despeisse; Franz‐Josef Haug; Quentin Jeangros; Andrea Ingenito; Christophe Ballif

doi:10.1021/acsenergylett.9b00377

25.1%-Efficient Monolithic Perovskite/Silicon Tandem Solar Cell Based on a <i>p</i>-type Monocrystalline Textured Silicon Wafer and High-Temperature Passivating Contacts

Gizem Nogay(Swiss Center for Electronics and Microtechnology (Switzerland)), Florent Sahli(École Polytechnique Fédérale de Lausanne), Jérémie Werner(École Polytechnique Fédérale de Lausanne), R. Monnard(École Polytechnique Fédérale de Lausanne), Mathieu Boccard(École Polytechnique Fédérale de Lausanne), Matthieu Despeisse(Swiss Center for Electronics and Microtechnology (Switzerland)), Franz‐Josef Haug(École Polytechnique Fédérale de Lausanne), Quentin Jeangros(École Polytechnique Fédérale de Lausanne), Andrea Ingenito(École Polytechnique Fédérale de Lausanne), Christophe Ballif(Swiss Center for Electronics and Microtechnology (Switzerland))

ACS Energy Letters

March 12, 2019

10.1021/acsenergylett.9b00377

Cited by 201Open Access

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Abstract

A monolithic two-terminal perovskite/silicon tandem solar cell based on an industrial, high-temperature tolerant p-type crystalline silicon bottom cell with a steady-state power conversion efficiency of 25.1% is demonstrated.

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