Write once read many times resistance switching memory based on all-inorganic perovskite CsPbBr3 quantum dot
Zhiliang Chen(Tianjin University), Jianquan Yao(Tianjin University), Qingyan Li(PowerChina (China)), Haitao Dai(Tianjin University), Lufan Jin(Tianjin University), Yu Yu(Tianjin University), Yifan Li(Nanjing Tech University), Tengteng Li(Tianjin University), Yating Zhang(Hefei University of Technology), Yongli Che(Tianjin University)
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