AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity
Feng Wu(Shanghai Institute of Technical Physics), Weida Hu(Shanghai Institute of Technical Physics), Haiding Sun(University of Science and Technology of China), Wencai Ren(Chinese Academy of Sciences), Fan Gong(Shanghai Institute of Technical Physics), Jianlu Wang(Shanghai Institute of Technical Physics), Hui Xia(Chinese Academy of Sciences), Junwei Zhang(Lanzhou University), Wei Lü(Shanghai University), Long Chen(Chinese Academy of Sciences), Peng Wang(Shanghai Institute of Technical Physics), Zhen Wang(Shanghai Institute of Technical Physics), Mingsheng Long(Collaborative Innovation Center of Advanced Microstructures), Xing Wu(East China Normal University)
Cited by 165
Related Papers
Photogating in Low Dimensional Photodetectors
|Advanced Science|2017|925
Ultrasensitive and Broadband MoS<sub>2</sub> Photodetector Driven by Ferroelectrics
|Advanced Materials|2015|833
Direct observation of the layer-dependent electronic structure in phosphorene
|Nature Nanotechnology|2016|820
Recommended Methods to Study Resistive Switching Devices
|Advanced Electronic Materials|2018|649
Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus
|Science Advances|2017|587