Morphology controlling of 〈111〉-3C–SiC films by HMDS flow rate in LCVD
Qingfang Xu(Wuhan University of Technology), Bikramjit Basu(Indian Institute of Science Bangalore), Rong Tu(Wuhan University of Technology), Haiwen Li(Sun Yat-sen University), Song Zhang(Nanjing University), Lianmeng Zhang(Wuhan University of Technology), Takashi Goto(Yokohama National University), Qingyun Sun(Wuhan University of Technology), Hitoshi Ohmori, Ji Shi(Quality Enhancement Research Initiative), Qizhong Li(Wuhan University of Technology), Meijun Yang(Wuhan University of Technology), M. L. Kosinova(Nikolaev Institute of Inorganic Chemistry)
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