A piezoelectric, strain-controlled antiferromagnetic memory insensitive to magnetic fields
Han Yan(Beihang University), Jingmin Wang(Wuhan National Laboratory for Optoelectronics), Zexiang Hu(Beihang University), J. M. D. Coey(Trinity College Dublin), Zhaoguogang Leng(Beihang University), Zuhuang Chen(Harbin Institute of Technology), Huixin Guo(Beihang University), Shun‐Li Shang(Pennsylvania State University), Peixin Qin(Beihang University), Chengbao Jiang(Beihang University), Xiaoning Wang(University of Science and Technology Liaoning), Jinhua Wang(Wuhan National Laboratory for Optoelectronics), Hui Wang(Beihang University), Zi‐Kui Liu(Pennsylvania State University), Wenkuo Lu(Beihang University), Xiaorong Zhou(Beihang University), Zhiqi Liu(Trinity College Dublin), Zexin Feng(Beihang University), Zengwei Zhu(ShanghaiTech University), Hui Hua(Beihang University)
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