Black phosphorus quantum dot-based field-effect transistors with ambipolar characteristics
Soonjoo Seo(Korea Basic Science Institute), Jouhahn Lee(Korea Basic Science Institute), Seung Youb Lee(Korea Basic Science Institute), Jonghan Won(Korea Basic Science Institute), Youn‐Jung Kim(Gyeongguk National University), Yooseok Kim(Korea Basic Science Institute), Young‐Jun Kim(California Institute of Technology), Hyun Uk Lee(Korea Institute of Nuclear Safety), Hyeran Kim(Korea Basic Science Institute), Byoungnam Park(Hongik University)
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