On-Chip Integration of GaN-Based Laser, Modulator, and Photodetector Grown on Si
Meixin Feng(Chinese Academy of Sciences), Jin Wang(Chinese Academy of Sciences), Rui Zhou(University of Science and Technology of China), Qian Sun(Chinese Academy of Sciences), Hongwei Gao(Chinese Academy of Sciences), Yu Zhou(Chinese Academy of Sciences), Jianxun Liu(Chinese Academy of Sciences), Yingnan Huang(Chinese Academy of Sciences), Shuming Zhang(University of Science and Technology of China), Masao Ikeda(Chinese Academy of Sciences), Huaibing Wang(Chinese Academy of Sciences), Yuantao Zhang(Nanjing University of Posts and Telecommunications), Yongjin Wang(Jilin University), Hui Yang(University of Science and Technology of China)
Cited by 101
Abstract
A preliminary on-chip integration of GaN-based laser, modulator, and photodetector grown on Si is reported. The modulator is integrated into the laser and shares the same InGaN quantum well active region with the laser and the photodetector. By varying the applied voltage to the modulator, the absorption of the modulator can be adjusted due to the changed band bending of the InGaN quantum well active region, and hence the threshold current and the light output power of the laser can be tuned. The photodetector can effectively detect the output power of the laser tuned by the applied voltage to the modulator, which opens up a new way for GaN-based on-chip photonic integration on Si.
Related Papers
No related papers found
Powered by citation graph analysis