A drain leakage phenomenon in poly silicon channel 3D NAND flash caused by conductive paths along grain boundaries

Bo Wang(Guangdong University of Technology), He Qian(University of Science and Technology of China), Bin Gao(Chinese Academy of Sciences), Huaqiang Wu(Tsinghua University)
Microelectronic Engineering
February 8, 2018
10.1016/j.mee.2018.02.009
Cited by 34

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