Construction of GaN/Ga<sub>2</sub>O<sub>3</sub> p–n junction for an extremely high responsivity self-powered UV photodetector
Peigang Li(Zhejiang Sci-Tech University), Haoze Shi(Zhejiang Sci-Tech University), Kai Chen(Zhejiang Sci-Tech University), Daoyou Guo(Zhejiang Sci-Tech University), Wei Cui(Beijing University of Posts and Telecommunications), Yusong Zhi(Beijing University of Posts and Telecommunications), Shunli Wang(Zhejiang Sci-Tech University), Zhenping Wu(Beijing University of Posts and Telecommunications), Zhengwei Chen(Beijing University of Posts and Telecommunications), Weihua Tang(Beijing University of Posts and Telecommunications)
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Abstract
A self-powered ultraviolet photodetector with an extremely high responsivity (54.43 mA W<sup>−1</sup>) was fabricated by constructing p–n junction of GaN/Ga<sub>2</sub>O<sub>3</sub> films.
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