Dopant Induced Impurity Bands and Carrier Concentration Control for Thermoelectric Enhancement in p-Type Cr<sub>2</sub>Ge<sub>2</sub>Te<sub>6</sub>
Xiaodan Tang(University of Science and Technology Liaoning), Xiaoyuan Zhou(Sichuan University), Dingfeng Yang(Chongqing University), Jiyan Dai(Ningbo University), Huijun Liu(Wuhan University), Guoyu Wang(Chongqing University), Dengdong Fan(Wuhan University of Technology), Xu Lu(Nanjing Agricultural University), Lijie Guo(Chongqing University), Kunling Peng(Nanjing University of Science and Technology)
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