Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study

Ali Saeidi(École Polytechnique Fédérale de Lausanne), Adrian M. Ionescu(NanoLab (United States)), S. Mantl(Forschungszentrum Jülich), Francesco Bellando(École Polytechnique Fédérale de Lausanne), Qing‐Tai Zhao(Forschungszentrum Jülich), Gia Vinh Luong(Forschungszentrum Jülich), Farzan Jazaeri(École Polytechnique Fédérale de Lausanne), Christian Enz(École Polytechnique Fédérale de Lausanne), Igor Stolichnov(École Polytechnique Fédérale de Lausanne)
IEEE Electron Device Letters
August 2, 2017
10.1109/led.2017.2734943
Cited by 92

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