Graphene quantum dot (GQD)-induced photovoltaic and photoelectric memory elements in a pentacene/GQD field effect transistor as a probe of functional interface
Young‐Jun Kim(California Institute of Technology), Byoungnam Park(Hongik University), Seongeun Cho(Hongik University), Hye‐Ran Kim(Kangwon National University), Jouhahn Lee(Korea Basic Science Institute), Soonjoo Seo(Korea Basic Science Institute), Hyun Uk Lee(Korea Institute of Nuclear Safety), Hyungduk Ko(Korea Institute of Science and Technology), Mincheol Chang(Chonnam National University)
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