Cause and possible cures for delamination of epitaxial structures containing wet thermally oxidised aluminium arsenide (AlAs) during optoelectronic device processing
L. Hobbs(University of Glasgow), Mhairi Mackenzie(Urban Big Data Centre), Thomas F. Krauss(University of York), Iain Eddie(University of Glasgow), DW McComb, AC Bryce, RM De La Rue, J.S. Roberts, Grant Erwin(University of Glasgow)
Unknown
January 1, 2004
Cited by 0
Related Papers
Green light emission in silicon through slow-light enhanced third-harmonic generation in photonic-crystal waveguides
|Nature Photonics|2009|627
Theories of Change and Realistic Evaluation
|Evaluation|2007|376
What (or who) causes health inequalities: Theories, evidence and implications?
|Health Policy|2013|186
Structure and composition of silicon-stabilized tricalcium phosphate
|Biomaterials|2002|162