High Mobility 2D Palladium Diselenide Field‐Effect Transistors with Tunable Ambipolar Characteristics

Abstract

Due to the intriguing optical and electronic properties, 2D materials have attracted a lot of interest for the electronic and optoelectronic applications. Identifying new promising 2D materials will be rewarding toward the development of next generation 2D electronics. Here, palladium diselenide (PdSe 2 ), a noble‐transition metal dichalcogenide (TMDC), is introduced as a promising high mobility 2D material into the fast growing 2D community. Field‐effect transistors (FETs) based on ultrathin PdSe 2 show intrinsic ambipolar characteristic. The polarity of the FET can be tuned. After vacuum annealing, the authors find PdSe 2 to exhibit electron‐dominated transport with high mobility ( µ e (max) = 216 cm 2 V −1 s −1 ) and on/off ratio up to 10 3 . Hole‐dominated‐transport PdSe 2 can be obtained by molecular doping using F 4 ‐TCNQ. This pioneer work on PdSe 2 will spark interests in the less explored regime of noble‐TMDCs.