Enhancement of voltage-controlled magnetic anisotropy through precise control of Mg insertion thickness at CoFeB|MgO interface
Xiang Li(University of California, Los Angeles), Kang L. Wang(Chinese Academy of Sciences), Pedram Khalili Amiri(Northwestern University), Cécile Grèzes(University of California, Los Angeles), Nicholas D. Altieri, Zongzhi Zhang(Fudan University), Kevin Fitzell, Jane P. Chang(Pfizer (United States)), Sarah H. Tolbert(California NanoSystems Institute), Kin Wong(University of California, Los Angeles), Guoqiang Yu(University of California, Los Angeles), C. Ty Karaba(University of California, Los Angeles), Di Wu(University of California, Los Angeles), Nicholas Kioussis(California State University, Northridge), Abraham N. Buditama(University of California, Los Angeles)
Cited by 120
Related Papers
Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields
|Nature Nanotechnology|2014|1k
Designing Superhard Materials
|Science|2005|765
Low-power non-volatile spintronic memory: STT-RAM and beyond
|Journal of Physics D Applied Physics|2013|544