Retention-Aware Hybrid Main Memory (RAHMM): Big DRAM and Little SCM

Weiliang Jing(Fudan University), Bomy Chen(Microchip Technology (Germany)), Beomseop Lee(Samsung (South Korea)), Yinyin Lin(Fudan University), Yong Ye(Anhui University), Sangkyu Yoon(Samsung (South Korea)), Yuan Du, Kai Yang(Fudan University)
IEEE Transactions on Computers
November 7, 2016
Cited by 9


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