Highly indistinguishable and strongly entangled photons from symmetric GaAs quantum dots

Daniel Huber(Johannes Kepler University of Linz), Marcus Reindl(Johannes Kepler University of Linz), Yong-Heng Huo(Johannes Kepler University of Linz), Huiying Huang(Johannes Kepler University of Linz), Johannes S. Wildmann(Johannes Kepler University of Linz), Oliver G. Schmidt(Leibniz Institute for Solid State and Materials Research), Armando Rastelli(Johannes Kepler University of Linz), Rinaldo Trotta(Johannes Kepler University of Linz)
Nature Communications
May 26, 2017
Cited by 273Open Access
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Abstract

Abstract The development of scalable sources of non-classical light is fundamental to unlocking the technological potential of quantum photonics. Semiconductor quantum dots are emerging as near-optimal sources of indistinguishable single photons. However, their performance as sources of entangled-photon pairs are still modest compared to parametric down converters. Photons emitted from conventional Stranski–Krastanov InGaAs quantum dots have shown non-optimal levels of entanglement and indistinguishability. For quantum networks, both criteria must be met simultaneously. Here, we show that this is possible with a system that has received limited attention so far: GaAs quantum dots. They can emit triggered polarization-entangled photons with high purity (g (2) (0) = 0.002±0.002), high indistinguishability (0.93±0.07 for 2 ns pulse separation) and high entanglement fidelity (0.94±0.01). Our results show that GaAs might be the material of choice for quantum-dot entanglement sources in future quantum technologies.


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