A 144 GHz InP/InGaAs composite collector heterostructure bipolar transistor

Feygenson(AT&T (United States)), Hamm(AT&T (United States)), Smith(AT&T (United States)), Pinto(AT&T (United States)), Montgomery(AT&T (United States)), Yadvish(AT&T (United States)), Temkin(AT&T (United States))
Unknown
January 1, 1992
10.1109/iedm.1992.307312
Cited by 20

Abstract

We describe a composite collector InP/InGaAs heterostructure bipolar transistor with f/sub T/=144 GHz and f/sub max/=81 GHz. The breakdown voltage BV/sub CEO/ is greater than 5V and output conductance is essentially independent of the collector voltage. This combination of performance characteristics is obtained with a carefully optimized collector structure. A monolithic transimpedance amplifier based on composite collector transistors has a bandwidth of 28 GHz and gain of 40 dB Omega . A hybrid optical receiver constructed with these amplifiers has open eye diagrams at 32 Gbit/s and a 1*10/sup -9/ error rate with -23.7 dBm of incident power.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

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