Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes

Fucai Liu(Nanyang Technological University), Lü You(Nanyang Technological University), Kyle L. Seyler(University of Washington), Xiaobao Li(Hefei University of Technology), Peng Yu(Nanyang Technological University), Junhao Lin(Oak Ridge National Laboratory), Xuewen Wang(Nanyang Technological University), Jiadong Zhou(Nanyang Technological University), Hong Wang(Nanyang Technological University), Haiyong He(Nanyang Technological University), Sokrates T. Pantelides(Oak Ridge National Laboratory), Wu Zhou(Oak Ridge National Laboratory), Pradeep Sharma(University of Houston), Xiaodong Xu(University of Washington), Pulickel M. Ajayan(Rice University), Junling Wang(Nanyang Technological University), Zheng Liu(Nanyang Technological University)
Nature Communications
August 11, 2016
Cited by 1,181Open Access
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Abstract

Abstract Two-dimensional (2D) materials have emerged as promising candidates for various optoelectronic applications based on their diverse electronic properties, ranging from insulating to superconducting. However, cooperative phenomena such as ferroelectricity in the 2D limit have not been well explored. Here, we report room-temperature ferroelectricity in 2D CuInP 2 S 6 (CIPS) with a transition temperature of ∼320 K. Switchable polarization is observed in thin CIPS of ∼4 nm. To demonstrate the potential of this 2D ferroelectric material, we prepare a van der Waals (vdW) ferroelectric diode formed by CIPS/Si heterostructure, which shows good memory behaviour with on/off ratio of ∼100. The addition of ferroelectricity to the 2D family opens up possibilities for numerous novel applications, including sensors, actuators, non-volatile memory devices, and various vdW heterostructures based on 2D ferroelectricity.


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