High‐Sensitivity Floating‐Gate Phototransistors Based on WS<sub>2</sub> and MoS<sub>2</sub>
Fan Gong(Shanghai Institute of Technical Physics), Weida Hu(Shanghai Institute of Technical Physics), Lei Liao(Hunan University), Dingshan Zheng(Chinese Academy of Sciences), Jianlu Wang(Shanghai Institute of Technical Physics), Wenjin Luo(Shanghai Institute of Technical Physics), Nan Guo(Shanghai Institute of Technical Physics), Wei Lü(Shanghai Institute of Technical Physics), Peng Wang(Shanghai Institute of Technical Physics), Jingli Wang(Wuhan University), Hehai Fang(Shanghai Institute of Technical Physics), Man Luo(Hefei National Center for Physical Sciences at Nanoscale), Johnny C. Ho(City University of Hong Kong)
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