Electrode-induced digital-to-analog resistive switching in TaO<sub><i>x</i></sub>-based RRAM devices

Xinyi Li(Institute of Microelectronics), He Qian(University of Science and Technology of China), Huaqiang Wu(Beijing Advanced Sciences and Innovation Center), Jian Cai(Peking University), Wei Wu(Institute of Microelectronics), Bin Gao(Chinese Academy of Sciences), Dong Wu(Tsinghua University), Ning Deng(Fujitsu (China))
Nanotechnology
June 15, 2016
10.1088/0957-4484/27/30/305201
Cited by 60

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