A striking performance improvement of fullerene n-channel field-effect transistors via synergistic interfacial modifications

Lili Du(Shanxi Provincial Cancer Hospital), Yingquan Peng(China Jiliang University), Zhanwei Wen(Institute of Microelectronics), Wenli Lv(China Jiliang University), Fobao Huang(Northwestern Polytechnical University), Hongquan Xia(Institute of Microelectronics), Qiang Ren(Beihang University), Feiyu Zhao(Institute of Microelectronics), Jianping Zhang(Renmin University of China), Yao Li(North China University of Science and Technology), Junkang Zhong(Institute of Microelectronics), Lei Sun(Maternal and Child Health Hospital of Xinjiang Uygur Autonomous Region), Xiao Luo(South China Agricultural University)
Journal of Physics D Applied Physics
September 17, 2015
Cited by 2


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