Alloy Clustering in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">As</mml:mi></mml:math>Compound Semiconductors Grown by Molecular Beam Epitaxy

P. M. Petroff; A. Y. Cho; F. K. Reinhart; A. C. Gossard; W. Wiegmann

doi:10.1103/physrevlett.48.170

Alloy Clustering in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">As</mml:mi></mml:math>Compound Semiconductors Grown by Molecular Beam Epitaxy

P. M. Petroff, A. Y. Cho, F. K. Reinhart, A. C. Gossard, W. Wiegmann

Physical Review Letters

January 18, 1982

10.1103/physrevlett.48.170

Cited by 123

Abstract

Direct evidence of alloy clustering in the ${\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{Al}}_{x}\mathrm{As}$ alloy system is presented. Clustering is observed only on the nonpolar surface of GaAs. An exchange reaction model is proposed to account for the existence of a surface-orientation-dependent miscibility gap for this alloy system.

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