Tuning of Nonvolatile Bipolar Memristive Switching in Co(III) Polymer with an Extended Azo Aromatic Ligand

Anasuya Bandyopadhyay(National Institute for Materials Science), Satyajit Sahu(National Institute for Materials Science), Masayoshi Higuchi(National Institute for Materials Science)
Journal of the American Chemical Society
January 6, 2011
Cited by 152

Abstract

We have fabricated a unique memristive device by molecular engineering and demonstrated that the leakage current tuning in the device is 100 times more efficient than that in a standard device. Molecular analogs of the memristive matrices used here are an electrochemically active conjugated Co(III) polymer (CP) and a nonconjugated Co(III) polymer (NCP), which have been synthesized in good yield and characterized by (1)H NMR spectroscopy. Redox switching of an organic-metallic hybrid polymer generates bistable states with a large ON/OFF ratio that supports random flip-flops for several hours. Thus, we provide a synthetic solution to leakage current restriction, one of the fundamental problems faced when fabricating state-of-the-art electronic devices.


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