Electric-Field Control of Nonvolatile Magnetization in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>Co</mml:mi><mml:mn>40</mml:mn></mml:msub><mml:msub><mml:mi>Fe</mml:mi><mml:mn>40</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">B</mml:mi><mml:mn>20</mml:mn></mml:msub><mml:mo>/</mml:mo><mml:mi>Pb</mml:mi><mml:mo stretchy="false">(</mml:mo><mml:msub><mml:mi>Mg</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>/</mml:mo><mml:mn>3</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mi>Nb</mml:mi><mml:mrow><mml:mn>2</mml:mn><mml:mo>/</mml:mo><mml:mn>3</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mo stretchy="false">)</mml:mo><mml:mn>0.7</mml:mn></mml:msub><mml:msub><mml:mi>Ti</mml:mi><mml:mn>0.3</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>Structure at Room Temperature

Sen Zhang; Yonggang Zhao; Pinhao Li; Jianping Yang; Syed Rizwan; Jinxing Zhang; Jan Seidel; T. L. Qu; Yuanjun Yang; Zhenlin Luo; Qing He; Tao Zou; Qiyong Chen; Jiawei Wang; Letao Yang; Young Sun; Yizheng Wu; Xia Xiao; Xiaofeng Jin; Jing Huang; Chenyan Gao; Xingguo Han; R. Ramesh

doi:10.1103/physrevlett.108.137203

Electric-Field Control of Nonvolatile Magnetization in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>Co</mml:mi><mml:mn>40</mml:mn></mml:msub><mml:msub><mml:mi>Fe</mml:mi><mml:mn>40</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">B</mml:mi><mml:mn>20</mml:mn></mml:msub><mml:mo>/</mml:mo><mml:mi>Pb</mml:mi><mml:mo stretchy="false">(</mml:mo><mml:msub><mml:mi>Mg</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>/</mml:mo><mml:mn>3</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mi>Nb</mml:mi><mml:mrow><mml:mn>2</mml:mn><mml:mo>/</mml:mo><mml:mn>3</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mo stretchy="false">)</mml:mo><mml:mn>0.7</mml:mn></mml:msub><mml:msub><mml:mi>Ti</mml:mi><mml:mn>0.3</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>Structure at Room Temperature

Sen Zhang(Tsinghua University), Yonggang Zhao(Tsinghua University), Pinhao Li(Tsinghua University), Jianping Yang(Tsinghua University), Syed Rizwan(Chinese Academy of Sciences), Jinxing Zhang(University of California, Berkeley), Jan Seidel(University of California, Berkeley), T. L. Qu(Tsinghua University), Yuanjun Yang(University of Science and Technology of China), Zhenlin Luo(National Synchrotron Radiation Laboratory), Qing He(University of California, Berkeley), Tao Zou(Chinese Academy of Sciences), Qiyong Chen(Tsinghua University), Jiawei Wang(Tsinghua University), Letao Yang(Tsinghua University), Young Sun(National Laboratory for Superconductivity), Yizheng Wu(State Key Laboratory of Surface Physics), Xia Xiao(State Key Laboratory of Surface Physics), Xiaofeng Jin(State Key Laboratory of Surface Physics), Jing Huang(Bruker (China)), Chenyan Gao(University of Science and Technology of China), Xingguo Han(National Laboratory for Superconductivity), R. Ramesh(University of California, Berkeley)

Physical Review Letters

March 28, 2012

10.1103/physrevlett.108.137203

Cited by 355

Abstract

We report a large and nonvolatile bipolar-electric-field-controlled magnetization at room temperature in a ${\mathrm{Co}}_{40}{\mathrm{Fe}}_{40}{\mathrm{B}}_{20}/\mathrm{Pb}({\mathrm{Mg}}_{1/3}{\mathrm{Nb}}_{2/3}{)}_{0.7}{\mathrm{Ti}}_{0.3}{\mathrm{O}}_{3}$ structure, which exhibits an electric-field-controlled looplike magnetization. Investigations on the ferroelectric domains and crystal structures with in situ electric fields reveal that the effect is related to the combined action of 109\ifmmode^\circ\else\textdegree\fi{} ferroelastic domain switching and the absence of magnetocrystalline anisotropy in ${\mathrm{Co}}_{40}{\mathrm{Fe}}_{40}{\mathrm{B}}_{20}$. This work provides a route to realize large and nonvolatile magnetoelectric coupling at room temperature and is significant for applications.

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