High-Gain Inverters Based on WSe<sub>2</sub> Complementary Field-Effect Transistors

Mahmut Tosun(University of California, Berkeley), Steven S.C. Chuang(Lawrence Berkeley National Laboratory), Hui Fang(Lawrence Berkeley National Laboratory), Angada B. Sachid(University of California, Berkeley), Mark Hettick(Lawrence Berkeley National Laboratory), Yongjing Lin(University of California, Berkeley), Yuping Zeng(Lawrence Berkeley National Laboratory), Ali Javey(Lawrence Berkeley National Laboratory)
ACS Nano
March 31, 2014
10.1021/nn5009929
Cited by 320

Abstract

In this work, the operation of n- and p-type field-effect transistors (FETs) on the same WSe2 flake is realized,and a complementary logic inverter is demonstrated. The p-FET is fabricated by contacting WSe2 with a high work function metal, Pt, which facilities hole injection at the source contact. The n-FET is realized by utilizing selective surface charge transfer doping with potassium to form degenerately doped n+ contacts for electron injection. An ON/OFF current ratio of >10(4) is achieved for both n- and p-FETs with similar ON current densities. A dc voltage gain of >12 is measured for the complementary WSe2 inverter. This work presents an important advance toward realization of complementary logic devices based on layered chalcogenide semiconductors for electronic applications.

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