Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride
Dmitry Ruzmetov(National Institute of Standards and Technology), Tony Ivanov(DEVCOM Army Research Laboratory), Berç Kalanyan(National Institute of Standards and Technology), Pankaj B. Shah(DEVCOM Army Research Laboratory), Ganesh R. Bhimanapati(Pennsylvania State University), Robert A. Burke(DEVCOM Army Research Laboratory), Sarah M. Eichfeld(Pennsylvania State University), Gheorghe Stan(National Institute of Standards and Technology), F. J. Crowne(DEVCOM Army Research Laboratory), Joshua A. Robinson(Pennsylvania State University), Albert V. Davydov(National Institute of Standards and Technology), Kehao Zhang(Pennsylvania State University), Terrance P. O’Regan(DEVCOM Army Research Laboratory), A. Glen Birdwell(DEVCOM Army Research Laboratory)
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