Single event effect in a ferroelectric-gate field-effect transistor under heavy-ion irradiation
Shaoan Yan(Xiangtan University), Yichun Zhou(Xiangtan University), Hao Ding(Xiangtan University), Wanli Zhang(Dalian University of Technology), Jianwei Chen(Zhejiang University of Technology), Hongxia Guo(Northwest Institute of Nuclear Technology), Minghua Tang(Xiangtan University), Xinyu Xu(Zhejiang Sci-Tech University), Xudong Wang(Jilin University), Zhao We(Northwest Institute of Nuclear Technology), Li Zheng(Brookhaven National Laboratory)
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