Record PVCR GaAs-based tunnel diodes fabricated on Si substrates using aspect ratio trapping
S.L. Rommel(Rochester Institute of Technology), Anthony Lochtefeld(AmberWave (United States)), D. Pawlik(Rochester Institute of Technology), Alan Seabaugh(University of Notre Dame), Jennifer M. Hydrick(AmberWave (United States)), Santosh Kurinec(Rochester Institute of Technology), J.S. Park(AmberWave (United States)), J. Z. Li(AmberWave (United States)), Jie Bai(Chongqing Jiaotong University), Paul M. Thomas(Rochester Institute of Technology), Michael Barth(Pennsylvania State University), Zhiyuan Cheng(AmberWave (United States)), Kelsey E. Johnson(University of Minnesota), M. Carroll(AmberWave (United States)), J.G. Fiorenza(AmberWave (United States))
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