High P/sub 1dB/ and low quiescent current SiGe HBT power amplifier MMIC using self base bias control circuit for 5.8 GHz ETC terminals
Shintaro Shinjo(Mitsubishi Group (Japan)), Noriharu Suematsu(Mitsubishi Electric (Japan)), Mahito Nakanishi(Tokiwa University), Hiroyuki Ueda(Mitsubishi Group (Japan)), Toshihiko Sugano(Mitsubishi Group (Japan)), Masasi Inoue(Mitsubishi Electric (Japan))
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