Characterization of 1.9- and 1.4-nm Ultrathin Gate Oxynitride by Oxidation of Nitrogen-implanted Silicon Substrate

Qiuxia Xu(University of Chinese Academy of Sciences), Dexin Wu(Institute of Microelectronics), Gang Lin(Fujian Normal University), Ming Liu(China Academy of Space Technology), Chuhong Zhu(Chinese Academy of Sciences), He Qian(University of Science and Technology of China), Bo Chen(Xihua University), Zhengsheng Han(Chinese Academy of Sciences)
IEEE Transactions on Electron Devices
January 1, 2004
10.1109/ted.2003.821389
Cited by 19

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