A Comparative Study of Two Different Schemes to Dopant Segregation at NiSi/Si and PtSi/Si Interfaces for Schottky Barrier Height Lowering
Zhi‐Jun Qiu(Fudan University), Shi‐Li Zhang(KTH Royal Institute of Technology), Mikael Östling(KTH Royal Institute of Technology), Zhen Zhang(KTH Royal Institute of Technology)
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