Measurement of proton induced radiation damage to CMOS transistors and p-i-n diodes
H. J. Ziock(Los Alamos National Laboratory), C M Hoffman(Los Alamos National Laboratory), D. B. Holtkamp(Los Alamos National Laboratory), W.W. Kinnison(Los Alamos National Laboratory), C. Milner(Los Alamos National Laboratory), W.F. Sommer(Los Alamos National Laboratory), J. Bacigalupi(University of California, Santa Cruz), N. Cartiglia(University of California, Santa Cruz), J. DeWitt(University of California, Santa Cruz), A. Kaluzniacki(University of California, Santa Cruz), H. Kolanoski(University of California, Santa Cruz), D. Pitzl(University of California, Santa Cruz), W.A. Rowe(University of California, Santa Cruz), H. F-W. Sadrozinski(University of California, Santa Cruz), E. Spencer(University of California, Santa Cruz), Peter Tenenbaum(University of California, Santa Cruz), P.D. Ferguson(Missouri University of Science and Technology), P. Giubellino(Istituto Nazionale di Fisica Nucleare, Sezione di Torino), Sabrina Sartori(Istituto Nazionale di Fisica Nucleare, Sezione di Torino)
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Abstract
As part of a program to develop a silicon tracking device for the Superconducting Super Collider (SSC), radiation-hard CMOS transistors and p-i-n diodes have been exposed to the 800-MeV LAMPF (Los Alamos Meson Physics Facility) proton beam. The fluences accumulated in one week corresponded to the expected radiation levels of about ten SSC years. The leakage current constants for p-i-n diodes and threshold voltage shifts for CMOS transistors are determined under different biasing conditions. The results are presented and examined in detail.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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