Imperfect Oriented Attachment: Dislocation Generation in Defect-Free Nanocrystals

R. Lee Penn(The University of Tokyo), Jillian F. Banfield(The University of Tokyo)
Science
August 14, 1998
Cited by 2,411

Abstract

Dislocations are common defects in solids, yet all crystals begin as dislocation-free nuclei. The mechanisms by which dislocations form during early growth are poorly understood. When nanocrystalline materials grow by oriented attachment at crystallographically specific surfaces and there is a small misorientation at the interface, dislocations result. Spiral growth at two or more closely spaced screw dislocations provides a mechanism for generating complex polytypic and polymorphic structures. These results are of fundamental importance to understanding crystal growth.


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