Accelerated publication 16.4% total‐area conversion efficiency thin‐film polycrystalline MgF<sub>2</sub>/ZnO/CdS/Cu(In,Ga)Se<sub>2</sub>/Mo solar cell

Miguel Á. Contreras(National Laboratory of the Rockies), Andrew M. Gabor(National Laboratory of the Rockies), A. Tennant(National Laboratory of the Rockies), S. E. Asher(National Laboratory of the Rockies), John R. Tuttle(National Laboratory of the Rockies), R. Noufi(National Laboratory of the Rockies)
Progress in Photovoltaics Research and Applications
October 1, 1994
10.1002/pip.4670020404
Cited by 87

Abstract

Abstract This communication reports an MgF 2 /ZnO/CdS/Cu(In,Ga)Se 2 /Mo/glass polycrystalline solar cell with a confirmed total‐area conversion efficiency of 16.4%. the thin‐film Cu(In,Ga)Se 2 absorber was fabricated by computer‐controlled physical vapor deposition (PVD) from the elemental sources. the resulting absorber has a Gal/In compositional grading that we refer to as a notch. Capacitance‐voltage (C‐V) measurements also reveal a graded doping profile in the region near the electronic p‐n junction. the enhanced device performance is characterized by an open‐circuit voltage (V oc ) of 660 mV and a particularly high fill factor (FF) of 78.7%.

Related Papers

No related papers found

Powered by citation graph analysis