High-Thermoelectric Performance of Nanostructured Bismuth Antimony Telluride Bulk Alloys

Bed Poudel(Boston College), Qing Hao(Boston College), Yi Ma(Boston College), Yucheng Lan(Boston College), Austin J. Minnich(Boston College), Bo Yu(Boston College), Xiao Yan(Boston College), Dezhi Wang(Boston College), Andrew Muto(Boston College), Daryoosh Vashaee(Boston College), Xiaoyuan Chen(Boston College), Jun‐Ming Liu(Boston College), M. S. Dresselhaus(Boston College), Gang Chen(Boston College), Zhifeng Ren(Boston College)
Science
March 21, 2008
Cited by 5,518

Abstract

The dimensionless thermoelectric figure of merit (ZT) in bismuth antimony telluride (BiSbTe) bulk alloys has remained around 1 for more than 50 years. We show that a peak ZT of 1.4 at 100 degrees C can be achieved in a p-type nanocrystalline BiSbTe bulk alloy. These nanocrystalline bulk materials were made by hot pressing nanopowders that were ball-milled from crystalline ingots under inert conditions. Electrical transport measurements, coupled with microstructure studies and modeling, show that the ZT improvement is the result of low thermal conductivity caused by the increased phonon scattering by grain boundaries and defects. More importantly, ZT is about 1.2 at room temperature and 0.8 at 250 degrees C, which makes these materials useful for cooling and power generation. Cooling devices that use these materials have produced high-temperature differences of 86 degrees , 106 degrees , and 119 degrees C with hot-side temperatures set at 50 degrees, 100 degrees, and 150 degrees C, respectively. This discovery sets the stage for use of a new nanocomposite approach in developing high-performance low-cost bulk thermoelectric materials.


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