Schottky-Barrier Height Tuning by Means of Ion Implantation Into Preformed Silicide Films Followed by Drive-In Anneal

Zhen Zhang(KTH Royal Institute of Technology), Shi-Li Zhang(Fudan University), Zhi‐Jun Qiu(Fudan University), Ran Liu(Fudan University), Mikael Östling(KTH Royal Institute of Technology)
IEEE Electron Device Letters
June 28, 2007
Cited by 109


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