Zero-bias 40Gbit/s germanium waveguide photodetector on silicon
Laurent Vivien(Université Paris-Sud), A. Polzer(TU Wien), Delphine Marris‐Morini(Université Paris-Sud), Johann Osmond(Centre National de la Recherche Scientifique), Jean Michel Hartmann(Institut polytechnique de Grenoble), P. Crozat(Centre National de la Recherche Scientifique), Éric Cassan(Université Paris-Sud), Christophe Kopp(CEA Grenoble), Horst Zimmermann(TU Wien), Jean Marc Fédéli(Institut polytechnique de Grenoble)
Cited by 420Open Access
Abstract
We report on lateral pin germanium photodetectors selectively grown at the end of silicon waveguides. A very high optical bandwidth, estimated up to 120GHz, was evidenced in 10 µm long Ge photodetectors using three kinds of experimental set-ups. In addition, a responsivity of 0.8 A/W at 1550 nm was measured. An open eye diagrams at 40Gb/s were demonstrated under zero-bias at a wavelength of 1.55 µm.
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