Comparison of hot carrier-induced RF performance degradation in H-gate and T-gate SOI MOSFETs
Byung-Jin Lee(Incheon National University), Jong‐Tae Park(Flex (United States)), Chong-Gun Yu(Incheon National University), Jang‐Woo Park(Sunchon National University), Kyosun Kim(Incheon National University)
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