V-doped SnS2: a new intermediate band material for a better use of the solar spectrumP. Wahnón(Universidad Politécnica de Madrid), Fernando Fresno(Instituto de Catálisis y Petroleoquímica)Physical Chemistry Chemical PhysicsJanuary 1, 201110.1039/c1cp22664aCited by 91SaveCiteExport RISWatch citationsRelated PapersAssessment through first-principles calculations of an intermediate-band photovoltaic material based on Ti-implanted silicon: Interstitial versus substitutional origin|Physical Review B|2009|91Theoretical optoelectronic analysis of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>MgIn</mml:mtext></mml:mrow><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mtext>S</mml:mtext><mml:mn>4</mml:mn></mml:msub></mml:mrow></mml:math>and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>CdIn</mml:mtext></mml:mrow><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mtext>S</mml:mtext><mml:mn>4</mml:mn></mml:msub></mml:mrow></mml:math>thiospinels: Effect of transition-metal substitution in intermediate-band formation|Physical Review B|2010|55