From Atomistic to Device Level Investigation of Hybrid Redox Molecular/Silicon Field-Effect Memory Devices

Tiziana Pro(Commissariat à l'Énergie Atomique et aux Énergies Alternatives), S. Deleonibus(Commissariat à l'Énergie Atomique et aux Énergies Alternatives), E. Jalaguier(Institut polytechnique de Grenoble), S. Lombardo(Institute for Microelectronics and Microsystems), Julien Buckley(Commissariat à l'Énergie Atomique et aux Énergies Alternatives), Kai Huang(Commissariat à l'Énergie Atomique et aux Énergies Alternatives), Adrian Calboréan(Institut polytechnique de Grenoble), B. De Salvo(Commissariat à l'Énergie Atomique et aux Énergies Alternatives), G. Ghibaudo(Institut de Microélectronique, Electromagnétisme et Photonique), Nicolas Chevalier(Institut polytechnique de Grenoble), Giuseppe Nicotra(Institute for Microelectronics and Microsystems), Pascale Maldivi(Institut polytechnique de Grenoble), Florence Duclairoir(Université Paris-Sud), Venera Aiello(Institut polytechnique de Grenoble), M. Gély(Institut polytechnique de Grenoble), G. Delapierre(Commissariat à l'Énergie Atomique et aux Énergies Alternatives), Régis Barattin(Institut polytechnique de Grenoble)
IEEE Transactions on Nanotechnology
January 12, 2010
10.1109/tnano.2009.2038612
Cited by 13

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