Microwave Dielectric Loss of Titanium Oxide

Alan Templeton(American Ceramic Society), Xiaoru Wang(London South Bank University), S.J. Penn(London South Bank University), Stephen Webb(London South Bank University), L. F. Cohen(London South Bank University), Neil McN. Alford(American Ceramic Society)
Journal of the American Ceramic Society
January 1, 2000
Cited by 356

Abstract

The dielectric loss (tan δ) of titanium dioxide (TiO 2 ) disks has been measured at a frequency of 3 GHz. High‐purity TiO 2 sintered to almost‐full density exhibits a very high tan δ, which is interpreted to be due to oxygen deficiency. To counter this, doping with stable divalent and trivalent cations, such as Mg and Al, leads to a low tan δ, probably by preventing Ti 4+ reduction. The tan δ of polycrystalline TiO 2 doped with divalent and trivalent ions with ionic radii in the range of 0.5–0.95 Å at 3 GHz can be very low: 6 × 10 −5 ( Q ∼ 17 000) at a temperature of 300 K. The tan δ of undoped pure TiO 2 disks increases when the disks are cooled from 300 K to ∼100 K. At temperatures <100 K, the tan δ decreases rapidly, which is interpreted as carrier freeze‐out. The tan δ for all the high‐ Q doped TiO 2 polycrystalline samples smoothly decrease to ∼5 × 10 −6 ( Q ∼ 200 000) at 15 K, comparable to that of single crystals.


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