Graphene nanoribbon field-effect transistors
Stephen Thornhill(University of Alberta), Nathanael L. Y. Wu(University of Alberta), Zhuo Wang(University of Science and Technology of China), Q. W. Shi(University of Science and Technology of China), Jie Chen(University of Alberta)
Cited by 9
Abstract
We demonstrated that an electronic field-effect transistor (FET) can be made from patterned monolayer or bilayer graphene nanoribbons. The FET performance can be achieved regardless of structural defects (either edge defects or topological defects). The I-V characteristics of resulting FETs are similar to those made from single-walled carbon nanotubes. This one-dimensional functional device is very useful for future nanoscale electronics.
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