Unintentionally doped InN grown onto an atomically flat AlN intermediate layer using plasma‐assisted molecular beam epitaxy
K. R. Wang(National Tsing Hua University), S. K. Chen(National Tsing Hua University), Yeng-Long Chen(Sichuan University), Kai-Yuan Cheng(National Tsing Hua University), Su-Jien Lin(National Tsing Hua University), Ching‐Lien Hsiao(National Taiwan University), Zhouyu Jiang(National Sun Yat-sen University), Li Tu(National Sun Yat-sen University), M. Chen(National Sun Yat-sen University), Jien‐Wei Yeh(National Tsing Hua University)
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