Perovskite–fullerene hybrid materials suppress hysteresis in planar diodes

Jixian Xu(University of Toronto), Andrei Buin(University of Toronto), Alexander H. Ip(University of Toronto), Wei Li(University of Toronto), Oleksandr Voznyy(University of Toronto), Riccardo Comin(University of Toronto), Mingjian Yuan(University of Toronto), Seokmin Jeon(Oak Ridge National Laboratory), Zhijun Ning(University of Toronto), Jeffrey J. McDowell(University of Toronto), Pongsakorn Kanjanaboos(University of Toronto), Jon‐Paul Sun(Dalhousie University), Xinzheng Lan(University of Toronto), Li Na Quan(Ewha Womans University), Dong Ha Kim(Ewha Womans University), Ian G. Hill(Dalhousie University), Petro Maksymovych(Oak Ridge National Laboratory), Edward H. Sargent(University of Toronto)
Nature Communications
May 8, 2015
Cited by 1,106Open Access
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Abstract

Solution-processed planar perovskite devices are highly desirable in a wide variety of optoelectronic applications; however, they are prone to hysteresis and current instabilities. Here we report the first perovskite-PCBM hybrid solid with significantly reduced hysteresis and recombination loss achieved in a single step. This new material displays an efficient electrically coupled microstructure: PCBM is homogeneously distributed throughout the film at perovskite grain boundaries. The PCBM passivates the key PbI3(-) antisite defects during the perovskite self-assembly, as revealed by theory and experiment. Photoluminescence transient spectroscopy proves that the PCBM phase promotes electron extraction. We showcase this mixed material in planar solar cells that feature low hysteresis and enhanced photovoltage. Using conductive AFM studies, we reveal the memristive properties of perovskite films. We close by positing that PCBM, by tying up both halide-rich antisites and unincorporated halides, reduces electric field-induced anion migration that may give rise to hysteresis and unstable diode behaviour.


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