Capacitance of p‐ and n‐Doped Graphenes is Dominated by Structural Defects Regardless of the Dopant Type
Adriano Ambrosi(Qingdao University of Science and Technology), Martin Pumera(Brno University of Technology), Hwee Ling Poh(Nanyang Technological University), Zdeněk Sofer(University of Chemistry and Technology, Prague), Lu Wang(China University of Petroleum, East China)
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