Capacitance of p‐ and n‐Doped Graphenes is Dominated by Structural Defects Regardless of the Dopant Type
Adriano Ambrosi(Division of Chemistry), Martin Pumera(Division of Chemistry), Hwee Ling Poh(Nanyang Technological University), Zdeněk Sofer(University of Chemistry and Technology, Prague), Lu Wang(University of Toronto)
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