1.3 μm GaInAsP lasers with Bragg reflector consisting of semiconductor and air
T. Mukaihara(Furukawa Electric (Japan)), A. Kasukawa(Furukawa Electric (Japan)), N. Yamanaka(Furukawa Electric (Japan)), N. Iwai(Kyoto Prefectural University of Medicine), T. Ishikawa(Keio University), K. Nishikata(Furukawa Electric (Japan))
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