Fabrication and program/erase characteristics of 30-nm SONOS nonvolatile memory devices
Suk‐Kang Sung(Seoul National University), Chung Woo Kim(Samsung (South Korea)), Yong Kyu Lee(Seoul National University), Byung-Gook Park(Seoul National University), Soo Doo Chae(Samsung (South Korea)), Chang Ju Lee(Chosun University), Il-Han Park(Seoul National University), Jong Duk Lee(Seoul National University)
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