1.3-μm InAsP n-type modulation-doped MQW lasers grown by gas-source molecular beam epitaxy

H. Shimizu(Furukawa Electric (Japan)), A. Kasukawa(Furukawa Electric (Japan)), N. Yamanaka(Furukawa Electric (Japan)), K. Kumada(Furukawa Electric (Japan)), N. Iwai(Kyoto Prefectural University of Medicine), T. Mukaihara(Furukawa Electric (Japan))
IEEE Journal of Selected Topics in Quantum Electronics
January 1, 1999
10.1109/2944.788404
Cited by 9

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